Datasheet | BSD816SNL6327HTSA1 |
File Size | 472.03 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | BSD816SNL6327HTSA1 |
Description | MOSFET N-CH 20V 1.4A SOT363 |
BSD816SNL6327HTSA1 - Infineon Technologies
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BSD816SNL6327HTSA1 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT363 | 379 More on Order |
URL Link
www.oemstron.com/datasheet/BSD816SNL6327HTSA1
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id 950mV @ 3.7µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 2.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT363-6 Package / Case 6-VSSOP, SC-88, SOT-363 |