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| Datasheet | BSH111,215 |
| File Size | 281.61 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BSH111,215, BSH111,235 |
| Description | MOSFET N-CH 55V 335MA SOT-23, MOSFET N-CH 55V 0.335A SOT23 |
BSH111,215 - Nexperia
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BSH111,215 | Nexperia | MOSFET N-CH 55V 335MA SOT-23 | 473 More on Order |
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BSH111,235 | Nexperia | MOSFET N-CH 55V 0.335A SOT23 | 426 More on Order |
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 335mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1nC @ 8V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 830mW (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 335mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1nC @ 8V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 830mW (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |