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| Datasheet | BSO615CT |
| File Size | 155.58 KB |
| Total Pages | 13 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSO615CT |
| Description | MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
BSO615CT - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/BSO615CT
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 3.1A, 2A Rds On (Max) @ Id, Vgs 110mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package PG-DSO-8 |