Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BSP317PL6327HTSA1 |
| File Size | 77.08 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | BSP317PL6327HTSA1, BSP317PE6327T, BSP317PE6327 |
| Description | MOSFET P-CH 250V 0.43A SOT-223, MOSFET P-CH 250V 0.43A SOT223, MOSFET P-CH 250V 0.43A SOT223 |
BSP317PL6327HTSA1 - Infineon Technologies
The Products You May Be Interested In
 |
BSP317PL6327HTSA1 | Infineon Technologies | MOSFET P-CH 250V 0.43A SOT-223 | 346 More on Order |
 |
BSP317PE6327T | Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | 467 More on Order |
 |
BSP317PE6327 | Infineon Technologies | MOSFET P-CH 250V 0.43A SOT223 | 220 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V Vgs(th) (Max) @ Id 2V @ 370µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V Vgs(th) (Max) @ Id 2V @ 370µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V Vgs(th) (Max) @ Id 2V @ 370µA Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |