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BSS192 Datasheet

BSS192,135 Cover
DatasheetBSS192,135
File Size371.71 KB
Total Pages16
ManufacturerNexperia
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BSS192,135, BSS192,115
Description MOSFET P-CH 240V 0.2A SOT89, MOSFET P-CH 240V 0.2A SOT89

BSS192,135 - Nexperia

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The Products You May Be Interested In

BSS192,135 BSS192,135 Nexperia MOSFET P-CH 240V 0.2A SOT89 500

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BSS192,115 BSS192,115 Nexperia MOSFET P-CH 240V 0.2A SOT89 100208

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URL Link

BSS192,135

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 25V

FET Feature

-

Power Dissipation (Max)

560mW (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89

Package / Case

TO-243AA

BSS192,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

240V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

90pF @ 25V

FET Feature

-

Power Dissipation (Max)

560mW (Ta), 12.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-89

Package / Case

TO-243AA