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| Datasheet | BSS816NW L6327 |
| File Size | 450.64 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSS816NW L6327 |
| Description | MOSFET N-CH 20V 1.4A SOT323 |
BSS816NW L6327 - Infineon Technologies
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BSS816NW L6327 | Infineon Technologies | MOSFET N-CH 20V 1.4A SOT323 | 205 More on Order |
URL Link
www.oemstron.com/datasheet/BSS816NW L6327
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id 750mV @ 3.7µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 2.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT323-3 Package / Case SC-70, SOT-323 |