Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BTS113AE3045ANTMA1 |
| File Size | 548.79 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BTS113AE3045ANTMA1, BTS113ANKSA1 |
| Description | MOSFET N-CH 60V 11.5A TO-220AB, MOSFET N-CH 60V 11.5A TO-220AB |
BTS113AE3045ANTMA1 - Infineon Technologies
The Products You May Be Interested In
 |
BTS113AE3045ANTMA1 | Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | 284 More on Order |
 |
BTS113ANKSA1 | Infineon Technologies | MOSFET N-CH 60V 11.5A TO-220AB | 240 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 170mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-220AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 170mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220AB Package / Case TO-220-3 |