Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BTS282Z E3230 |
| File Size | 270.91 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | BTS282Z E3230, BTS282ZAKSA1, BTS282Z E3180A |
| Description | MOSFET N-CH 49V 80A TO220-7, MOSFET N-CH 49V 80A TO220-7, MOSFET N-CH 49V 80A TO-220-7 |
BTS282Z E3230 - Infineon Technologies
The Products You May Be Interested In
 |
BTS282Z E3230 | Infineon Technologies | MOSFET N-CH 49V 80A TO220-7 | 386 More on Order |
 |
BTS282ZAKSA1 | Infineon Technologies | MOSFET N-CH 49V 80A TO220-7 | 429 More on Order |
 |
BTS282Z E3180A | Infineon Technologies | MOSFET N-CH 49V 80A TO-220-7 | 336 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-7-230 Package / Case TO-220-7 |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-7-3 Package / Case TO-220-7 |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO220-7-180 Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |