Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK7628-55A,118 |
| File Size | 286.42 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BUK7628-55A,118, BUK7528-55A,127 |
| Description | MOSFET N-CH 55V 42A D2PAK, MOSFET N-CH 55V 42A TO220AB |
BUK7628-55A,118 - NXP
The Products You May Be Interested In
 |
BUK7628-55A,118 | NXP | MOSFET N-CH 55V 42A D2PAK | 462 More on Order |
 |
BUK7528-55A,127 | Nexperia | MOSFET N-CH 55V 42A TO220AB | 408 More on Order |
URL Link
|
Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1165pF @ 25V FET Feature - Power Dissipation (Max) 99W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1165pF @ 25V FET Feature - Power Dissipation (Max) 99W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |