Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK78150-55A,135 |
| File Size | 926.36 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | BUK78150-55A,135, BUK78150-55A,115, BUK78150-55A/CUF, BUK78150-55A/CUX |
| Description | MOSFET N-CH 55V 5.5A SOT223, MOSFET N-CH 55V 5.5A SOT223, MOSFET N-CH 55V 5.5A SOT223, MOSFET N-CH 55V 5.5A SOT223 |
BUK78150-55A,135 - NXP
The Products You May Be Interested In
 |
BUK78150-55A,135 | NXP | MOSFET N-CH 55V 5.5A SOT223 | 446 More on Order |
 |
BUK78150-55A,115 | NXP | MOSFET N-CH 55V 5.5A SOT223 | 111 More on Order |
 |
BUK78150-55A/CUF | Nexperia | MOSFET N-CH 55V 5.5A SOT223 | 125 More on Order |
 |
BUK78150-55A/CUX | Nexperia | MOSFET N-CH 55V 5.5A SOT223 | 249 More on Order |
URL Link
|
Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |