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Datasheet | BUK7880-55,135 |
File Size | 306.85 KB |
Total Pages | 12 |
Manufacturer | NXP |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | BUK7880-55,135, BUK7880-55/CUF |
Description | MOSFET N-CH 55V 3.5A SOT223, MOSFET N-CH 55V 7.5A SOT223 |
BUK7880-55,135 - NXP
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The Products You May Be Interested In
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BUK7880-55,135 | NXP | MOSFET N-CH 55V 3.5A SOT223 | 316 More on Order |
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BUK7880-55/CUF | Nexperia | MOSFET N-CH 55V 7.5A SOT223 | 11532 More on Order |
URL Link
Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V FET Feature - Power Dissipation (Max) 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |