Datasheet | BUK98150-55/CUF |
File Size | 339.51 KB |
Total Pages | 12 |
Manufacturer | Nexperia |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | BUK98150-55/CUF, BUK98150-55,135 |
Description | MOSFET N-CH 55V 5.5A SOT223, MOSFET N-CH 55V 5.5A SOT-223 |
BUK98150-55/CUF - Nexperia
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BUK98150-55/CUF | Nexperia | MOSFET N-CH 55V 5.5A SOT223 | 285 More on Order |
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BUK98150-55,135 | NXP | MOSFET N-CH 55V 5.5A SOT-223 | 199 More on Order |
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Nexperia Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V FET Feature - Power Dissipation (Max) 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |
NXP Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 150mOhm @ 5A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V FET Feature - Power Dissipation (Max) 8.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |