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| Datasheet | BUK98150-55A,135 |
| File Size | 744.1 KB |
| Total Pages | 13 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BUK98150-55A,135, BUK98150-55A/CUF |
| Description | MOSFET N-CH 55V 5.5A SOT-223, MOSFET N-CH 55V 5.5A SOT223 |
BUK98150-55A,135 - NXP
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Manufacturer NXP USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 137mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 137mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 5.3nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 320pF @ 25V FET Feature - Power Dissipation (Max) 8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-73 Package / Case TO-261-4, TO-261AA |