Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK9E1R8-40E,127 |
| File Size | 209.92 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK9E1R8-40E,127 |
| Description | MOSFET N-CH 40V 120A I2PAK |
BUK9E1R8-40E,127 - NXP
The Products You May Be Interested In
 |
BUK9E1R8-40E,127 | NXP | MOSFET N-CH 40V 120A I2PAK | 434 More on Order |
URL Link
www.oemstron.com/datasheet/BUK9E1R8-40E,127
|
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 16400pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |