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| Datasheet | BUK9E6R1-100E,127 |
| File Size | 327.12 KB |
| Total Pages | 14 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUK9E6R1-100E,127 |
| Description | MOSFET N-CH 100V 120A I2PAK |
BUK9E6R1-100E,127 - NXP
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BUK9E6R1-100E,127 | NXP | MOSFET N-CH 100V 120A I2PAK | 338 More on Order |
URL Link
www.oemstron.com/datasheet/BUK9E6R1-100E,127
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 133nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 17460pF @ 25V FET Feature - Power Dissipation (Max) 349W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |