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| Datasheet | BUK9Y19-55B/C2,115 |
| File Size | 734.58 KB |
| Total Pages | 12 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BUK9Y19-55B/C2,115, BUK9Y19-55B,115 |
| Description | MOSFET N-CH 55V 46A LFPAK, MOSFET N-CH 55V 46A LFPAK |
BUK9Y19-55B/C2,115 - Nexperia
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 46A Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 17.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1992pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 17.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1992pF @ 25V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |