Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BUK9Y30-75B/C2,115 |
| File Size | 665.13 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BUK9Y30-75B/C2,115, BUK9Y30-75B,115 |
| Description | MOSFET N-CH 75V 34A LFPAK, MOSFET N-CH 75V 34A LFPAK |
BUK9Y30-75B/C2,115 - Nexperia
The Products You May Be Interested In
 |
BUK9Y30-75B/C2,115 | Nexperia | MOSFET N-CH 75V 34A LFPAK | 317 More on Order |
 |
BUK9Y30-75B,115 | Nexperia | MOSFET N-CH 75V 34A LFPAK | 4280 More on Order |
URL Link
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 34A Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 28mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 28mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 25V FET Feature - Power Dissipation (Max) 85W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |