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| Datasheet | BUZ32 H |
| File Size | 402.94 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BUZ32 H |
| Description | MOSFET N-CH 200V 9.5A TO220-3 |
BUZ32 H - Infineon Technologies
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BUZ32 H | Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | 533 More on Order |
URL Link
www.oemstron.com/datasheet/BUZ32 H
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Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |