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BY329-1200 Datasheet

BY329-1200,127 Cover
DatasheetBY329-1200,127
File Size42.54 KB
Total Pages6
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BY329-1200,127, BY329-1000,127
Description DIODE GEN PURP 1.2KV 8A TO220AC, DIODE GEN PURP 1KV 8A TO220AC

BY329-1200,127 - NXP

BY329-1200 Datasheet Page 1
BY329-1200 Datasheet Page 2
BY329-1200 Datasheet Page 3
BY329-1200 Datasheet Page 4
BY329-1200 Datasheet Page 5
BY329-1200 Datasheet Page 6

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BY329-1000,127 BY329-1000,127 NXP DIODE GEN PURP 1KV 8A TO220AC 152

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URL Link

Manufacturer

NXP USA Inc.

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.85V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

135ns

Current - Reverse Leakage @ Vr

1mA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

150°C (Max)

Manufacturer

NXP USA Inc.

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

1.85V @ 20A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

135ns

Current - Reverse Leakage @ Vr

1mA @ 800V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

150°C (Max)