Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BYR29-600,127 |
| File Size | 385.25 KB |
| Total Pages | 7 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BYR29-600,127, BYR29-800,127 |
| Description | DIODE GEN PURP 600V 8A TO220AC, DIODE GEN PURP 800V 8A TO220AC |
BYR29-600,127 - WeEn Semiconductors
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Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.5V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 150°C (Max) |
Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.5V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 150°C (Max) |