Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | BYV30-600PQ |
| File Size | 266.68 KB |
| Total Pages | 10 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | BYV30-600PQ, BYC30B-600PJ |
| Description | DIODE GEN PURP 600V 30A TO220AC, DIODE GEN PURP 600V 30A D2PAK |
BYV30-600PQ - WeEn Semiconductors
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Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 1.55V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 75ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |
Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 2.75V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK Operating Temperature - Junction 175°C (Max) |