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| Datasheet | BYV30JT-600PQ |
| File Size | 270.11 KB |
| Total Pages | 10 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BYV30JT-600PQ |
| Description | DIODE GEN PURP 600V 30A TO-3P |
BYV30JT-600PQ - WeEn Semiconductors
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URL Link
www.oemstron.com/datasheet/BYV30JT-600PQ
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Manufacturer WeEn Semiconductors Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 1.8V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 65ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P Operating Temperature - Junction 175°C (Max) |