![BYW80-200G Cover](http://media.oemstron.com/oemstron/datasheet/sm/byw80-200g-0001.jpg)
Datasheet | BYW80-200G |
File Size | 98.81 KB |
Total Pages | 4 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | BYW80-200G |
Description | DIODE GEN PURP 200V 8A TO220-2 |
BYW80-200G - ON Semiconductor
![BYW80-200G Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/byw80-200g-0001.jpg)
![BYW80-200G Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/byw80-200g-0002.jpg)
![BYW80-200G Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/byw80-200g-0003.jpg)
![BYW80-200G Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/byw80-200g-0004.jpg)
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BYW80-200G | ON Semiconductor | DIODE GEN PURP 200V 8A TO220-2 | 8626 More on Order |
URL Link
www.oemstron.com/datasheet/BYW80-200G
Manufacturer ON Semiconductor Series SWITCHMODE™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.25V @ 22A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -65°C ~ 175°C |