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| Datasheet | CLS02(TE16R,Q) |
| File Size | 194.06 KB |
| Total Pages | 5 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | CLS02(TE16R,Q), CLS02(TE16L,SQC,Q), CLS02(TE16L,HIT,Q), CLS02(T6L,CLAR,Q), CLS02(T6L,CANO-O,Q |
| Description | DIODE SCHOTTKY 40V 10A L-FLAT, DIODE SCHOTTKY 40V 10A L-FLAT, DIODE SCHOTTKY 40V 10A L-FLAT, DIODE SCHOTTKY 40V 10A L-FLAT, DIODE SCHOTTKY 40V 10A L-FLAT |
CLS02(TE16R,Q) - Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |