
Datasheet | CPH3355-TL-H |
File Size | 401.86 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | CPH3355-TL-H, CPH3355-TL-W |
Description | MOSFET P-CH 30V 2.5A CPH3, MOSFET P-CH 30V 2.5A CPH3 |
CPH3355-TL-H - ON Semiconductor





The Products You May Be Interested In
![]() |
CPH3355-TL-H | ON Semiconductor | MOSFET P-CH 30V 2.5A CPH3 | 258 More on Order |
![]() |
CPH3355-TL-W | ON Semiconductor | MOSFET P-CH 30V 2.5A CPH3 | 4320 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 156mOhm @ 1A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 172pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CPH Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 156mOhm @ 1A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 172pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CPH Package / Case TO-236-3, SC-59, SOT-23-3 |