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CZDM1003N BK Datasheet

CZDM1003N BK Cover
DatasheetCZDM1003N BK
File Size961.8 KB
Total Pages6
ManufacturerCentral Semiconductor Corp
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts CZDM1003N BK, CZDM1003N TR
Description MOSFET N-CH 100V 3A SOT-223, MOSFET N-CH 100V 3A SOT-223

CZDM1003N BK - Central Semiconductor Corp

CZDM1003N BK Datasheet Page 1
CZDM1003N BK Datasheet Page 2
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CZDM1003N BK Datasheet Page 5
CZDM1003N BK Datasheet Page 6

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URL Link

CZDM1003N BK

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

975pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

CZDM1003N TR

Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

20V

Input Capacitance (Ciss) (Max) @ Vds

975pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA