Datasheet | D3501N36TXPSA1 |
File Size | 244.65 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | D3501N36TXPSA1, D3501N42TXPSA1, D3501N40TXPSA1 |
Description | DIODE GP 4870A BG-D12035K-1, DIODE GEN PURP 4.2KV 4870A, DIODE GEN PURP 4KV 4870A |
D3501N36TXPSA1 - Infineon Technologies
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D3501N36TXPSA1 | Infineon Technologies | DIODE GP 4870A BG-D12035K-1 | 449 More on Order |
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D3501N42TXPSA1 | Infineon Technologies | DIODE GEN PURP 4.2KV 4870A | 334 More on Order |
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D3501N40TXPSA1 | Infineon Technologies | DIODE GEN PURP 4KV 4870A | 348 More on Order |
URL Link
Infineon Technologies Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) 4870A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package BG-D12035K-1 Operating Temperature - Junction -40°C ~ 160°C |
Infineon Technologies Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4200V Current - Average Rectified (Io) 4870A Voltage - Forward (Vf) (Max) @ If 1.27V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 160°C |
Infineon Technologies Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 4000V Current - Average Rectified (Io) 4870A Voltage - Forward (Vf) (Max) @ If 1.27V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 4000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 160°C |