Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | D5810N02TVFXPSA1 |
| File Size | 231.69 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | D5810N02TVFXPSA1, D4810N24TVFXPSA1, D4810N20TVFXPSA1, D4810N28TVFXPSA1, D4810N22TVFXPSA1 |
| Description | DIODE GEN PURP 200V 5800A, DIODE GEN PURP 2.4KV 4810A, DIODE GEN PURP 2KV 4810A, DIODE GEN PURP 2.8KV 4810A, DIODE GEN PURP 2.2KV 4810A |
D5810N02TVFXPSA1 - Infineon Technologies
The Products You May Be Interested In
 |
D5810N02TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 200V 5800A | 144 More on Order |
|
D4810N24TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 2.4KV 4810A | 199 More on Order |
|
D4810N20TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 2KV 4810A | 180 More on Order |
|
D4810N28TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 2.8KV 4810A | 213 More on Order |
|
D4810N22TVFXPSA1 | Infineon Technologies | DIODE GEN PURP 2.2KV 4810A | 141 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 5800A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AC, K-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 2400V Current - Average Rectified (Io) 4810A Voltage - Forward (Vf) (Max) @ If 1.078V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 2400V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 2000V Current - Average Rectified (Io) 4810A Voltage - Forward (Vf) (Max) @ If 1.078V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 2000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 2800V Current - Average Rectified (Io) 4810A Voltage - Forward (Vf) (Max) @ If 1.078V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 2800V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 2200V Current - Average Rectified (Io) 4810A Voltage - Forward (Vf) (Max) @ If 1.078V @ 4000A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200mA @ 2200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 150°C |