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| Datasheet | DD1200S12H4HOSA1 |
| File Size | 598.36 KB |
| Total Pages | 7 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DD1200S12H4HOSA1, DD1200S12H4 |
| Description | MOD DIODE 1200A IHMB130-2, DIODE MODULE 1200V 1200A |
DD1200S12H4HOSA1 - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series - IGBT Type - Configuration 2 Independent Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 1200A Power - Max 1200000W Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 1200A Current - Collector Cutoff (Max) - Input Capacitance (Cies) @ Vce - Input Standard NTC Thermistor No Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |
Manufacturer Infineon Technologies Series - Diode Configuration 2 Independent Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If 2.35V @ 1200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 475A @ 600V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package AG-IHMB130-2 |