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| Datasheet | DD800S17H4B2BOSA2 |
| File Size | 591.24 KB |
| Total Pages | 7 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DD800S17H4B2BOSA2 |
| Description | DIODE MODUL GP 1700V AGIHMB130-1 |
DD800S17H4B2BOSA2 - Infineon Technologies
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URL Link
www.oemstron.com/datasheet/DD800S17H4B2BOSA2
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Manufacturer Infineon Technologies Series - Diode Configuration 2 Independent Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1700V Current - Average Rectified (Io) (per Diode) - Voltage - Forward (Vf) (Max) @ If 2.1V @ 800A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 900A @ 900V Operating Temperature - Junction -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package AG-IHMB130-1 |