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DG2019DN-T1-E4 Datasheet

DG2019DN-T1-E4 Cover
DatasheetDG2019DN-T1-E4
File Size150.52 KB
Total Pages10
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts DG2019DN-T1-E4, DG2018DN-T1-E4
Description IC SWITCH DUAL SPDT 16QFN, IC SWITCH DUAL SPDT 16QFN

DG2019DN-T1-E4 - Vishay Siliconix

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URL Link

DG2019DN-T1-E4

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

4

On-State Resistance (Max)

8Ohm

Channel-to-Channel Matching (ΔRon)

600mOhm

Voltage - Supply, Single (V+)

1.8V ~ 5.5V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

48ns, 33ns

-3db Bandwidth

180MHz

Charge Injection

-2.46pC

Channel Capacitance (CS(off), CD(off))

7.5pF

Current - Leakage (IS(off)) (Max)

1nA

Crosstalk

-72dB @ 1MHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

16-VFQFN Exposed Pad

Supplier Device Package

16-QFN (3x3)

DG2018DN-T1-E4

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

DPDT

Multiplexer/Demultiplexer Circuit

2:2

Number of Circuits

2

On-State Resistance (Max)

8Ohm

Channel-to-Channel Matching (ΔRon)

600mOhm

Voltage - Supply, Single (V+)

1.8V ~ 5.5V

Voltage - Supply, Dual (V±)

-

Switch Time (Ton, Toff) (Max)

48ns, 33ns

-3db Bandwidth

180MHz

Charge Injection

-2.46pC

Channel Capacitance (CS(off), CD(off))

7.5pF

Current - Leakage (IS(off)) (Max)

1nA

Crosstalk

-72dB @ 1MHz

Operating Temperature

-40°C ~ 85°C (TA)

Package / Case

16-VFQFN Exposed Pad

Supplier Device Package

16-QFN (3x3)