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DG636EEQ-T1-GE4 Datasheet

DG636EEQ-T1-GE4 Cover
DatasheetDG636EEQ-T1-GE4
File Size309.7 KB
Total Pages17
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts DG636EEQ-T1-GE4, DG636EEN-T1-GE4
Description IC SWITCH DUAL SPDT 14TSSOP, IC ANALOG SWITCH 16MINIQFN

DG636EEQ-T1-GE4 - Vishay Siliconix

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URL Link

DG636EEQ-T1-GE4

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

96Ohm

Channel-to-Channel Matching (ΔRon)

2Ohm

Voltage - Supply, Single (V+)

3V ~ 16V

Voltage - Supply, Dual (V±)

±3V ~ 8V

Switch Time (Ton, Toff) (Max)

56ns, 61ns

-3db Bandwidth

700MHz

Charge Injection

-0.33pC

Channel Capacitance (CS(off), CD(off))

3.7pF, 4.4pF

Current - Leakage (IS(off)) (Max)

500pA

Crosstalk

-62dB @ 10MHz

Operating Temperature

-40°C ~ 125°C (TA)

Package / Case

14-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

14-TSSOP

DG636EEN-T1-GE4

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

96Ohm

Channel-to-Channel Matching (ΔRon)

300mOhm

Voltage - Supply, Single (V+)

3V ~ 16V

Voltage - Supply, Dual (V±)

±3V ~ 8V

Switch Time (Ton, Toff) (Max)

46ns, 55ns

-3db Bandwidth

700MHz

Charge Injection

-0.33pC

Channel Capacitance (CS(off), CD(off))

3.7pF, 4.4pF

Current - Leakage (IS(off)) (Max)

1nA

Crosstalk

-62dB @ 1MHz

Operating Temperature

-40°C ~ 125°C (TA)

Package / Case

16-UFQFN

Supplier Device Package

16-miniQFN (1.8x2.6)