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DG636EN-T1-E4 Datasheet

DG636EN-T1-E4 Cover
DatasheetDG636EN-T1-E4
File Size236.47 KB
Total Pages15
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts DG636EN-T1-E4, DG636EQ-T1-E3
Description IC SWITCH DUAL SPDT 16-MINIQFN, IC SWITCH DUAL SPDT 14TSSOP

DG636EN-T1-E4 - Vishay Siliconix

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DG636EQ-T1-E3 DG636EQ-T1-E3 Vishay Siliconix IC SWITCH DUAL SPDT 14TSSOP 151

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URL Link

DG636EN-T1-E4

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

115Ohm

Channel-to-Channel Matching (ΔRon)

1Ohm

Voltage - Supply, Single (V+)

2.7V ~ 12V

Voltage - Supply, Dual (V±)

±2.7V ~ 5V

Switch Time (Ton, Toff) (Max)

60ns, 52ns

-3db Bandwidth

610MHz

Charge Injection

0.1pC

Channel Capacitance (CS(off), CD(off))

2.1pF, 4.2pF

Current - Leakage (IS(off)) (Max)

100pA

Crosstalk

-88dB @ 10MHz

Operating Temperature

-40°C ~ 125°C (TA)

Package / Case

16-WFQFN

Supplier Device Package

16-miniQFN (1.8x2.6)

DG636EQ-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

Switch Circuit

SPDT

Multiplexer/Demultiplexer Circuit

2:1

Number of Circuits

2

On-State Resistance (Max)

115Ohm

Channel-to-Channel Matching (ΔRon)

1Ohm

Voltage - Supply, Single (V+)

2.7V ~ 12V

Voltage - Supply, Dual (V±)

±2.7V ~ 5V

Switch Time (Ton, Toff) (Max)

60ns, 52ns

-3db Bandwidth

610MHz

Charge Injection

0.1pC

Channel Capacitance (CS(off), CD(off))

2.1pF, 4.2pF

Current - Leakage (IS(off)) (Max)

100pA

Crosstalk

-88dB @ 10MHz

Operating Temperature

-40°C ~ 125°C (TA)

Package / Case

14-TSSOP (0.173", 4.40mm Width)

Supplier Device Package

14-TSSOP