Datasheet | DGD2101MS8-13 |
File Size | 1,331.97 KB |
Total Pages | 11 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | DGD2101MS8-13 |
Description | IC GATE DRVR HALF-BRIDG 8SO 2.5K |
DGD2101MS8-13 - Diodes Incorporated
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DGD2101MS8-13 | Diodes Incorporated | IC GATE DRVR HALF-BRIDG 8SO 2.5K | 126 More on Order |
URL Link
www.oemstron.com/datasheet/DGD2101MS8-13
Diodes Incorporated Manufacturer Diodes Incorporated Series - Driven Configuration High-Side or Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.5V Current - Peak Output (Source, Sink) 290mA, 600mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 70ns, 35ns Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |