Semiconductors
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| Datasheet | DLN10C-BT |
| File Size | 58.73 KB |
| Total Pages | 2 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DLN10C-BT, DLN10C-AT1 |
| Description | DIODE GEN PURP 200V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL |
DLN10C-BT - ON Semiconductor
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 980mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 980mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case R-1, Axial Supplier Device Package - Operating Temperature - Junction 150°C (Max) |