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| Datasheet | DMG3415UFY4Q-7 |
| File Size | 376.55 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG3415UFY4Q-7 |
| Description | MOSFET P-CH 16V 2.5A X2-DFN2015 |
DMG3415UFY4Q-7 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMG3415UFY4Q-7
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 39mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 282pF @ 10V FET Feature - Power Dissipation (Max) 650mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN2015-3 Package / Case 3-XDFN |