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DMG4468LK3-13 Datasheet

DMG4468LK3-13 Cover
DatasheetDMG4468LK3-13
File Size164.41 KB
Total Pages6
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts DMG4468LK3-13
Description MOSFET N-CH 30V 9.7A TO252

DMG4468LK3-13 - Diodes Incorporated

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URL Link

DMG4468LK3-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 11.6A, 10V

Vgs(th) (Max) @ Id

1.95V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.85nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

867pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.68W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63