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| Datasheet | DMG8880LSS-13 |
| File Size | 281.99 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMG8880LSS-13 |
| Description | MOSFET N-CH 30V 11.6A 8SOIC |
DMG8880LSS-13 - Diodes Incorporated
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DMG8880LSS-13 | Diodes Incorporated | MOSFET N-CH 30V 11.6A 8SOIC | 238 More on Order |
URL Link
www.oemstron.com/datasheet/DMG8880LSS-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 11.6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1289pF @ 15V FET Feature - Power Dissipation (Max) 1.43W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |