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| Datasheet | DMN1019UVT-13 |
| File Size | 359.37 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN1019UVT-13, DMN1019UVT-7 |
| Description | MOSFET N-CH 12V 10.7A TSOT26, MOSFET N-CH 12V 10.7A TSOT26 |
DMN1019UVT-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 10.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.4nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2588pF @ 10V FET Feature - Power Dissipation (Max) 1.73W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 10.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.4nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2588pF @ 10V FET Feature - Power Dissipation (Max) 1.73W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSOT-26 Package / Case SOT-23-6 Thin, TSOT-23-6 |