Semiconductors
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| Datasheet | DMN2005UFG-13 |
| File Size | 512.58 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMN2005UFG-13, DMN2005UFG-7 |
| Description | MOSFET N-CH 20V 18.1A POWERDI-8, MOSFET N-CH 20V 18.1A POWERDI-8 |
DMN2005UFG-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 18.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.6mOhm @ 13.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 6495pF @ 10V FET Feature - Power Dissipation (Max) 1.05W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 18.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 4.6mOhm @ 13.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 6495pF @ 10V FET Feature - Power Dissipation (Max) 1.05W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |