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| Datasheet | DMN2014LHAB-7 |
| File Size | 443.5 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN2014LHAB-7 |
| Description | MOSFET 2N-CH 20V 9A 6-UDFN |
DMN2014LHAB-7 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMN2014LHAB-7
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Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9A Rds On (Max) @ Id, Vgs 13mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V Power - Max 800mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UFDFN Exposed Pad Supplier Device Package U-DFN2030-6 (Type B) |