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| Datasheet | DMN2019UTS-13 |
| File Size | 223.65 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN2019UTS-13 |
| Description | MOSFET 2N-CH 20V 5.4A TSSOP-8 |
DMN2019UTS-13 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMN2019UTS-13
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Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.4A Rds On (Max) @ Id, Vgs 18.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V Power - Max 780mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |