Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | DMN2080UCB4-7 |
| File Size | 584.47 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN2080UCB4-7 |
| Description | MOSFET BVDSS: 8V24V X2-WLB0808- |
DMN2080UCB4-7 - Diodes Incorporated
The Products You May Be Interested In
 |
DMN2080UCB4-7 | Diodes Incorporated | MOSFET BVDSS: 8V24V X2-WLB0808- | 464 More on Order |
URL Link
www.oemstron.com/datasheet/DMN2080UCB4-7
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 56mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 540pF @ 10V FET Feature - Power Dissipation (Max) 710mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-WLB0606-4 Package / Case 4-XFBGA, WLBGA |