Datasheet | DMN30H4D1S-7 |
File Size | 587.19 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMN30H4D1S-7, DMN30H4D1S-13 |
Description | MOSFET BVDSS: 251V-500V SOT23, MOSFET BVDSS: 251V-500V SOT23 |
DMN30H4D1S-7 - Diodes Incorporated
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DMN30H4D1S-7 | Diodes Incorporated | MOSFET BVDSS: 251V-500V SOT23 | 454 More on Order |
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DMN30H4D1S-13 | Diodes Incorporated | MOSFET BVDSS: 251V-500V SOT23 | 151 More on Order |
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Diodes Incorporated Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Diodes Incorporated Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |