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DMN31D6UT-7 Datasheet

DMN31D6UT-7 Cover
DatasheetDMN31D6UT-7
File Size510.6 KB
Total Pages8
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN31D6UT-7, DMN31D6UT-13
Description MOSFET N-CH 30V 350MA SOT523, MOSFET N-CH 30V 350MA SOT523

DMN31D6UT-7 - Diodes Incorporated

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DMN31D6UT-7 DMN31D6UT-7 Diodes Incorporated MOSFET N-CH 30V 350MA SOT523 398

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DMN31D6UT-13 DMN31D6UT-13 Diodes Incorporated MOSFET N-CH 30V 350MA SOT523 124

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URL Link

DMN31D6UT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13.6pF @ 15V

FET Feature

-

Power Dissipation (Max)

320mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

DMN31D6UT-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 100mA, 4.5V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13.6pF @ 15V

FET Feature

-

Power Dissipation (Max)

320mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523