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DMN33D8LT-7 Datasheet

DMN33D8LT-7 Cover
DatasheetDMN33D8LT-7
File Size251.35 KB
Total Pages5
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN33D8LT-7, DMN33D8LT-13
Description MOSFET N-CH 30V 0.115A, MOSFET N-CH 30V 0.115A

DMN33D8LT-7 - Diodes Incorporated

DMN33D8LT-7 Datasheet Page 1
DMN33D8LT-7 Datasheet Page 2
DMN33D8LT-7 Datasheet Page 3
DMN33D8LT-7 Datasheet Page 4
DMN33D8LT-7 Datasheet Page 5

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URL Link

DMN33D8LT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

5Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

0.55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

48pF @ 5V

FET Feature

-

Power Dissipation (Max)

240mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

DMN33D8LT-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4V

Rds On (Max) @ Id, Vgs

5Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

0.55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

48pF @ 5V

FET Feature

-

Power Dissipation (Max)

240mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523