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DMN53D0LW-13 Datasheet

DMN53D0LW-13 Cover
DatasheetDMN53D0LW-13
File Size237.82 KB
Total Pages5
ManufacturerDiodes Incorporated
Websitehttps://www.diodes.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts DMN53D0LW-13, DMN53D0LW-7
Description MOSFET N-CH 50V SOT323, MOSFET N-CH 50V 360MA SOT323

DMN53D0LW-13 - Diodes Incorporated

DMN53D0LW-13 Datasheet Page 1
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DMN53D0LW-13 Datasheet Page 5

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URL Link

DMN53D0LW-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

360mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 270mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45.8pF @ 25V

FET Feature

-

Power Dissipation (Max)

320mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323

DMN53D0LW-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

360mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 270mA, 10V

Vgs(th) (Max) @ Id

1.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

45.8pF @ 25V

FET Feature

-

Power Dissipation (Max)

320mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-323

Package / Case

SC-70, SOT-323