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| Datasheet | DMN6070SY-13 |
| File Size | 495.08 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN6070SY-13 |
| Description | MOSFET N-CH 60V 4.1A SOT89-3 |
DMN6070SY-13 - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMN6070SY-13
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 85mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 588pF @ 30V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-89-3 Package / Case TO-243AA |