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| Datasheet | DMN80H2D0SCTI |
| File Size | 393.8 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMN80H2D0SCTI |
| Description | MOSFET N-CH 800V 7A ITO220AB |
DMN80H2D0SCTI - Diodes Incorporated
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URL Link
www.oemstron.com/datasheet/DMN80H2D0SCTI
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35.4nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1253pF @ 25V FET Feature - Power Dissipation (Max) 41W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220AB Package / Case TO-220-3 Full Pack, Isolated Tab |