![DMP2010UFG-13 Cover](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0001.jpg)
Datasheet | DMP2010UFG-13 |
File Size | 492.29 KB |
Total Pages | 7 |
Manufacturer | Diodes Incorporated |
Website | https://www.diodes.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | DMP2010UFG-13, DMP2010UFG-7 |
Description | MOSFET P-CH 20V 12.7A PWRDI3333, MOSFET P-CH 20V 12.7A PWRDI3333 |
DMP2010UFG-13 - Diodes Incorporated
![DMP2010UFG-13 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0001.jpg)
![DMP2010UFG-13 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0002.jpg)
![DMP2010UFG-13 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0003.jpg)
![DMP2010UFG-13 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0004.jpg)
![DMP2010UFG-13 Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0005.jpg)
![DMP2010UFG-13 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0006.jpg)
![DMP2010UFG-13 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/dmp2010ufg-13-0007.jpg)
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URL Link
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 9.5mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 3350pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 9.5mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 3350pF @ 10V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |